Electric-field and strain effect on magnetism on transition metal dichalcogenides

Authors

  • Munkhsaikhan Gonchigsuren 1 Department of Physics, School of Applied Sciences, Mongolian University of Science and Technology, Ulaanbaatar, Mongolia
  • Odkhuu Dorj 2 Department of Physics, the College of Natural Sciences, Incheon National University, Korea

DOI:

https://doi.org/10.5564/jasea.v2i1.3492

Keywords:

Magnetic momentum, 2D materials, first principles calculation

Abstract

Herein, from first-principles density functional calculations, intrinsic magnetism and magnetocrystalline anisotropy (MA) in two-dimensional (2D) structure and individual atom pairs are shown effectively controllable by means of simultaneous voltage and strain effects. By tuning the strain in transition metal dichalcogenides (TMDs) MoS2, WS2, MoSe2 and WSe2 with Os adatom as a model system, we demonstrate that the voltage dependence of MA varies from an extremely large value of 150 meV/Os in perpendicular to the lateral plane into -25 meV/Os in plane by an electric field of only 0.1–0.2 V/Å.

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Published

2021-12-25

How to Cite

[1]
M. Gonchigsuren and O. Dorj, “Electric-field and strain effect on magnetism on transition metal dichalcogenides”, J. appl. sci. eng., A, vol. 2, no. 1, pp. 34–39, Dec. 2021.

Issue

Vol. 2 No. 1 (2021)

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Copyright (c) 2021 Munkhsaikhan Gonchig, Odkhuu Dorj

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