Electrical and optical properties of dip coated Al-doped ZnO thin films : Effect of Al-concentration, starting solution and sample ageing

Authors

  • Ram Phul Yadav Department of Physics, Patan Multiple Campus, Tribhuvan University, Nepal
  • Krishna Bahadur Rai Department of Physics, Patan Multiple Campus, Tribhuvan University, Nepal
  • Shankar Prasad Shrestha Department of Physics, Patan Multiple Campus, Tribhuvan University, Nepal https://orcid.org/0000-0003-3919-8475

DOI:

https://doi.org/10.5564/mjc.v22i48.1743

Keywords:

Zinc oxide thin films, dip coating technique, sample aging, solution ageing

Abstract

Undoped and Aluminum doped Zinc Oxide thin films were synthesized by dip coating technique. The electrical properties of the films were studied due to the Aluminum doping, starting solution aging and sample aging. The sheet resistance of ZnO:Al films was minimum at 2.5 at % whereas carrier concentration is maximum. Both undoped and aluminum doped Zinc Oxide thin films were found to be highly transparent lying in between 65 - 79 % in the wavelength range 367 nm to 1038 nm. The band gap of deposited films changed slightly from 3.22 eV to 3.27 eV.

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Published

2021-10-30

How to Cite

Yadav, R. P., Rai, K. B., & Shrestha, S. P. (2021). Electrical and optical properties of dip coated Al-doped ZnO thin films : Effect of Al-concentration, starting solution and sample ageing. Mongolian Journal of Chemistry, 22(48), 38–44. https://doi.org/10.5564/mjc.v22i48.1743

Issue

Vol. 22 No. 48 (2021)

Section

Articles

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Copyright (c) 2021 Ram Phul Yadav, Krishna Bahadur Rai, Shankar Prasad Shrestha

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